Metrologia e sensores

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PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR QRB1113
PACKAGE DIMENSIONS
0.420 (10.67) 0.328 (8.33) 0.150 (3.81) NOM
PIN 1 PIN 2

QRB1114

E S

E
0.373 (9.47)

0.226 (5.74)

0.703 (17.86)S

PIN 3 PIN 4

0.020 (0.51) 4X

0.150 (3.81) MIN 0.603 (15.32)
REFLECTIVE SURFACE PIN1 ANODE PIN2 CATHODE PIN3 EMITTER PIN4 COLLECTOR

0.210 (5.33)

SCHEMATIC

0.300 (7.62)

NOTES: 1.Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified.

1

2

4

3

DESCRIPTION
The QRB1113/1114 consists ofan infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor responds to radiation from the emittingdiode only when a reflective object passes within its field of view. The area of the optimum response approximates a circle .200" in diameter.

FEATURES
• No contact surface sensing • Phototransistoroutput • Focused for sensing specular reflection • Daylight filter on photosensor • Dust cover

© 2002 Fairchild Semiconductor Corporation

Page 1 of 4

3/5/02 DS300350

PHOTOTRANSISTORREFLECTIVE OBJECT SENSOR QRB1113
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter Operating Temperature Storage Temperature Soldering Temperature Soldering Temperature EMITTERReverse Voltage Power SENSOR Dissipation(1) (Iron)(2,3,4) (Flow)(2,3) Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD VCEO VECO PD Rating -40 to +85 -40 to +85 240 for 5 sec 260 for 10 sec 50 5 100 30 4.5 20 100Units °C °C °C °C mA V mW V V mA mW

QRB1114

Continuous Forward Current

Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Power Dissipation(1)

NOTES 1. Derate powerdissipation linearly 1.67 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) minimum from housing. 5. D is...
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