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Document Number: 91294 www.vishay.com
S-Pending-Rev. A, 23-Jul-08 1
Power MOSFET
IRFZ48, SiHFZ48
Vishay Siliconix
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Ultra Low On-Resistance
• Very Low Thermal Resistance
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishayprovide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout theindustry.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 22 μH, RG = 25 Ω IAS = 72 A (see fig. 12).
c. ISD ≤ 72 A, dV/dt ≤ 200 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case
e. Current limited by the package, (die current = 72 A).
PRODUCT SUMMARY
VDS (V) 60
RDS(on) (Ω) VGS = 10 V 0.018
Qg (Max.) (nC) 110Qgs (nC) 29
Qgd (nC) 36
Configuration Single
N-Channel MOSFET
G
D
S
TO-220
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package TO-220
Lead (Pb)-free
IRFZ48PbF
SiHFZ48-E3
SnPb
IRFZ48
SiHFZ48
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 60
V
Gate-Source Voltage VGS ± 20
Continuous Drain CurrenteVGS at 10 V
TC = 25 °C
ID
50
TC = 100 °C 50 A
Pulsed Drain Currenta IDM 290
Linear Derating Factor 1.3 W/°C
Single Pulse Avalanche Energyb EAS 100 mJ
Avalanche Currenta IAR 50 A
Repetitive Avalanche Energya EAR 19 mJ
Maximum Power Dissipation TC = 25 °C PD 190 W
Peak Diode Recovery dV/dtc dV/dt 4.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175
°CSoldering Recommendations (Peak Temperature)d for 10 s 300
Mounting Torque 6-32 or M3 screw
10 lbf · in
1.1 N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com Document Number: 91294
2 S-Pending-Rev. A, 23-Jul-08
IRFZ48, SiHFZ48
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulsewidth ≤ 300 μs; duty cycle ≤ 2 %.
c. Current limited by the package, (die current = 72 A).
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62
Case-to-Sink, Flat, Greased Surface RthCS 0.50 - °C/W
Maximum Junction-to-Case (Drain) RthJC - 0.80
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX.UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 60 - - V
VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.060 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V
Gate-Source Leakage IGSS VGS = ± 20 - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 60 V, VGS = 0 V - - 25
μA
VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 43 Ab - - 0.018 Ω
Forward Transconductance gfs VDS = 25 V, ID = 43 Ab 27 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
- 2400 -
Output Capacitance Coss - 1300 - pF
Reverse Transfer Capacitance Crss - 190 -
Total Gate Charge Qg
VGS = 10 V ID = 72 A, VDS = 48 V,
see fig. 6 and 13b
- - 110Gate-Source Charge Qgs - - 29 nC
Gate-Drain Charge Qgd - - 36
Turn-On Delay Time td(on)
VDD = 30 V, ID = 72 A,
RG = 9.1 Ω, RD = 0.34 Ω, see fig. 10b
- 8.1 -
ns
Rise Time tr - 250 -
Turn-Off Delay Time td(off) - 210 -
Fall Time tf - 250 -
Internal Drain Inductance LD
Between lead,
6 mm (0.25") from
package and center of
die contact
- 4.5 -
nH
Internal Source Inductance LS - 7.5 -...
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