Manual

Document Number: 91294 www.vishay.com
S-Pending-Rev. A, 23-Jul-08 1
Power MOSFET
IRFZ48, SiHFZ48
Vishay Siliconix
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Ultra Low On-Resistance
• Very Low Thermal Resistance
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 22 μH, RG = 25 Ω IAS = 72 A (see fig. 12).
c. ISD ≤ 72 A, dV/dt ≤ 200 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case
e. Current limited by the package, (die current = 72 A).
PRODUCT SUMMARY
VDS (V) 60
RDS(on) (Ω) VGS = 10 V 0.018
Qg (Max.) (nC) 110
Qgs (nC) 29
Qgd (nC) 36
Configuration Single
N-Channel MOSFET
G
D
S
TO-220
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package TO-220
Lead (Pb)-free
IRFZ48PbF
SiHFZ48-E3
SnPb
IRFZ48
SiHFZ48
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 60
V
Gate-Source Voltage VGS ± 20
Continuous Drain Currente VGS at 10 V
TC = 25 °C
ID
50
TC = 100 °C 50 A
Pulsed Drain Currenta IDM 290
Linear Derating Factor 1.3 W/°C
Single Pulse Avalanche Energyb EAS 100 mJ
Avalanche Currenta IAR 50 A
Repetitive Avalanche Energya EAR 19 mJ
Maximum Power Dissipation TC = 25 °C PD 190 W
Peak Diode Recovery dV/dtc dV/dt 4.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175
°C
Soldering