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GM72V66841ET/ELT
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM

Description
The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells andlogic including input and output circuits operating synchronously by referring to the positive edge of the externally provided Clock. The GM72V66841ET/ELT provides four banks of 2,097,152 word by 8 bitto realize high bandwidth with the Clock frequency up to 143 Mhz.

Pin Configuration
VCC DQ0 VCCQ NC DQ1 VSSQ NC DQ2 VCCQ NC DQ3 VSSQ NC VCC NC /WE /CAS /RAS /CS BA0/A13 BA1/A12 A10,AP A0 A1 A2 A3VCC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28

JEDEC STANDARD 400 mil 54 PIN TSOP II(TOP VIEW)

Features
* PC133/PC100/PC66 Compatible -7(143MHz)/-75(133MHz)/-8(125MHz) -7K(PC100,2-2-2)/-7J(PC100,3-2-2) * 3.3V single Power supply * LVTTL interface * Max Clock frequency143/133/125/100MHz * 4,096 refresh cycle per 64 ms * Two kinds of refresh operation Auto refresh / Self refresh * Programmable burst access capability ; - Sequence:Sequential / Interleave - Length :1/2/4/8/FP *Programmable CAS latency : 2/3 * 4 Banks can operate independently or simultaneously * Burst read/burst write or burst read/single write operation capability * Input and output masking by DQM input *One Clock of back to back read or write command interval * Synchronous Power down and Clock suspend capability with one Clock latency for both entry and exit * JEDEC Standard 54Pin 400mil TSOP IIPackage

VSS DQ7 VSSQ NC DQ6 VCCQ NC DQ5 VSSQ NC DQ4 VCCQ NC VSS NC DQM CLK CKE NC A11 A9 A8 A7 A6 A5 A4 VSS

Pin Name
CLK CKE CS RAS CAS WE A0~A9,A11 A10 / AP BA0/A13 ~BA1/A12 DQ0~DQ7 DQM VCCQ VSSQVCC VSS NC Clock Clock Enable Chip Select Row Address Strobe Column Address Strobe Write Enable Address input Address input or Auto Precharge Bank select Data input / Data output Data input / output...
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