Datasheet mmbth10

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MMBTH10LT1, MMBTH10−4LT1
Preferred Devices

VHF/UHF Transistor
NPN Silicon
• Device Marking: 3EM
Device Marking:
Features http://onsemi.com

• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1 BASE

COLLECTOR 3

MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol VCEO VCBO VEBO Value 25 30 3.0 Unit VdcVdc Vdc
3

2 EMITTER

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 1) Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 2) Junction and Storage Temperature Range Symbol PD 225 1.8 RθJA PD 300 2.4 RθJA TJ,Tstg 417 −55 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W Max Unit
1 2

CASE 318 SOT−23 STYLE 6

ORDERING INFORMATION
Device MMBTH10LT1 MMBTH10LT1G MMBTH10−4LT1 Package SOT−23 SOT−23 (Pb−Free) SOT−23 Shipping† 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel

1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina

†For information on tape and reel specifications,including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Preferred devices are recommended choices for future use and best overall value.

© Semiconductor Components Industries, LLC, 2003

1

December, 2003 − Rev. 2

Publication Order Number: MMBTH10LT1/D

MMBTH10LT1, MMBTH10−4LT1
ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector−Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter−Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 25 Vdc, IE = 0) Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 4.0 mAdc, VCE = 10 Vdc)Collector−Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 0.4 mAdc) Base−Emitter On Voltage (IC = 4.0 mAdc, VCE = 10 Vdc) SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Collector−Base Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) Common−Base Feedback Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) Collector Base Time Constant (IC= 4.0 mAdc, VCB =10 Vdc, f = 31.8 MHz) fT MMBTH10LT1 MMBTH10−4LT1 Ccb Crb rb′Cc 650 800 − − − − − − − − − − 0.7 0.65 9.0 pF pF ps MHz hFE MMBTH10LT1 MMBTH10−4LT1 VCE(sat) VBE 60 120 − − − − − − − 240 0.5 0.95 Vdc Vdc − V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 25 30 3.0 − − − − − − − − − − 100 100 Vdc Vdc Vdc nAdc nAdc Symbol Min Typ Max Unit

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2

MMBTH10LT1, MMBTH10−4LT1
TYPICAL CHARACTERISTICSCOMMON−BASE y PARAMETERS versus FREQUENCY (VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25°C) yib, INPUT ADMITTANCE
80 y ib , INPUT ADMITTANCE (mmhos) 70 60 −b ib jb ib (mmhos) 50 40 30 20 10 0 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 −50 −60 −20 −30 −40 1000 MHz 700 400 200 100 gib 0 −10

0

10

20

30

40 50 gib (mmhos)

60

70

80

Figure 1. Rectangular Form
y ib , FORWARDTRANSFER ADMITTANCE (mmhos)

Figure 2. Polar Form

yfb, FORWARD TRANSFER ADMITTANCE
70 60 50 40 30 20 10 0 −10 −20 −30 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 10 70 60 50 40 10 30 20 gfb (mmhos) 0 −10 −20 −30 20 jb fb (mmhos) −g fb bfb 50 100 40 30 1000 MHz 60 200 400 600 700

Figure 3. Rectangular Form

Figure 4. Polar Form

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3

MMBTH10LT1, MMBTH10−4LT1TYPICAL CHARACTERISTICS
COMMON−BASE y PARAMETERS versus FREQUENCY (VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25°C) yrb, REVERSE TRANSFER ADMITTANCE
y rb , REVERSE TRANSFER ADMITTANCE (mmhos) 5.0 4.0 3.0 −brb 2.0 1.0 MPS H10 −grb 0 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 −5.0 −2.0 −1.8 −1.2 −0.8 −brb 0 100 MPS H11 jb rb (mmhos) −1.0 200 400

−2.0 −3.0

700 −4.0 1000 MHz 0 −0.4 0.4 grb (mmhos)...
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